Fast Recovery Diode VS-SD303C04S10C Vishay Replacement
Vishay Part Number | VS-SD303C04S10C |
Average forward current, IF(AV)M (TC) | 350A (55ºC) |
Voltage, VRRM | 400 V |
Dimensions ØDxØdxH | 42x19x14 mm |
Datasheet | |
Replacement AS ENERGITM | ASDD303C04S10C |
Add to Cart | on request |
Fast Recovery Diode ASDD303C04S10C AS ENERGITM also known as a Fast Diode or Fast Switching Diode, in disc design is a replacement, analogue, alternative and equivalent semiconductor device for fast recovery diode VS-SD303C04S10C Vishay Semiconductors.
Average forward current IFAV – 350 ampere, repetitive peak reverse voltage VRRM – 400V. "Air-cooled heatsinks O series for disc devices", "Air heatsink SF series", "Water heatsink SS series" for diode cooling are also available to order.
The peculiarity of diodes is their fast recovery (short reverse recovery time trr and small recovery charge) and application at high frequencies. Diodes have a high current-carrying capacity at high frequencies.
Features of Fast Recovery Diodes: optimised for line frequency; low reverse recovery time; high switching speed; low on-state losses; high reverse voltage and high current handling capabilities; press pack standard ceramic housing; designed for high power industrial and power transmission applications. Their main applications are rectifiers for DC-DC converters and inverters, high-frequency rectifiers, switching power supplies.
Fast Recovery Diodes AS ENERGITM have the following features: industry standard housing; low static and dynamic losses, high values of VRRM/VRSM, extensive experience of using the devices in various industries, range of voltages from 100 to 9000 V and amperages from 10 to 15000 A, high resistance to thermal and electric cycling.
The technical specifications and parameters of VS-SD303C04S10C and replacement ASDD303C04S10C, datasheet PDF, outline drawing and dimensions are listed below.
Our company provides a quality guarantee for diodes of 2 years from the date of purchase. When supplying diodes, if necessary, we provide technical passport and certificate of conformity.
The final price for fast recovery diodes in disc design depends on the voltage class, quantity, delivery terms, manufacturer, country of origin and form of payment.
General specifications of Fast Recovery Diode Vishay and Replacement:
Diode specifications | VS-SD303C04S10C | |
Maximum allowable average forward current (Case temperature) | IF(AV)M (TC) | 350 A (55ºC) |
Max. repetitive peak reverse blocking voltage | VRRM | 400 V |
Surge peak forward current | IFSM | 5770 A |
Reverse recovery time | trr | 1.0 μs |
Safety factor | I2t | 166 kA2·s |
Threshold voltage | VF(T0) | 1.63 V |
Forward slope resistance | rT | 0.77 mΩ |
Temperature of p-n junction | Tvj max | 125 ºC |
Thermal resistance, junction to case | Rth(j-c) | 0.011 K/kW |
Clamping force | Fm | 4.9 kN |
Weight | W | 70 g |
Package (Housing) | type | A-PUK (DO-200AA) |
Dimensions | ØDxØdxH | 42x19x14 mm |
Replacement AS ENERGITM | type | ASDD303C04S10C |
Datasheet |
Part Numbering Guide for Fast Recovery Diodes:
AS | DD | 30 | 3 | C | 04 | S10 | C |
AS | – | AS ENERGITM |
DD | – | Product group: Fast Recovery Diode Disc. |
30 | – | Essential part number. |
3 | – | Fast recovery. |
C | – | Ceramic PUK. |
04 | – | Voltage class VRRM x 100. |
S10 | – | trr code. |
C | – | PUK case A-PUK (DO-200AA). |
Polarity (anode, cathode) of power rectifier disc diodes:
High Power Semiconductors AS ENERGITM
Our company is engaged in the manufacturer and sale of wide range of power semiconductors (power thyristors, modules, rectifier diodes, avalanche, rotor and welding diodes, triacs etc.) currents up to 15000A and voltages to 9000V, and air and water heatsinks to them.
You can buy semiconductor devices in any volumes, and when ordering large lots, the price will be lower. We have earned the trust of customers and supply products all over the world.
For questions regarding the acquisition of Power Thyristors, Diodes, Modules send an email request to:
And we will provide you a commercial offer for delivery.
For a large number, we will provide an individual price!!!
We are open to manufacture products at our production facilities
according to your requests and technical task.
Photo Gallery
The photo gallery shows many different semiconductor devices, semiconductor chips and SCRs produced by AS ENERGITM, examples of test reports.
Heat sinks for power rectifier disc diodes:
Heat sinks (radiators) are used for single- and double-sided cooling of power semiconductor devices in disc design.
Heat sinks of coolers are made of aluminum radiator profiles and do not require additional protective coating when used in various climatic conditions.
Air and water heat sinks for rectifier diode cooling are also available to order.
See for more information about heatsinks: "Air-cooled heatsinks O series for disc devices", "Air heatsink SF series", "Water heatsink SS series".
Photo of Rectifier Diodes:
Why choose AS ENERGITM
- Own production facilities, including semiconductor silicon chips production
- European brand - 100% quality, favorable price, short production terms
- Over 20 years of experience in the semiconductor industry
- Clients from more than 50 countries trust us
- 20000 items in the product line for currents from 10A to 15000A, voltages from 100V to 9000V
- We produce analogues of other manufacturers' products
- Guaranteed certified quality, warranty period of operation - 2 years
Quality Warranty
Our products are certified and correspond to international standards.
Our company provides a quality guarantee for products of 2 years.
We provide certificates of conformity, reliability reports, data sheets and technical passports at the request of the customer.
Each product is tested for the main parameters, and Test reports of the parameters for each product are provided.
Geography of partnership
AS ENERGITM company manufactures and supplies power semiconductors to more than 50 countries around the world.
Logistics and Delivery
We deliver our products all over the world with the services of logistics companies: DHL, TNT, UPS, EMS, Fedex, Aramex.
Products can be delivered by any means of transport: air, sea, rail and road.
AS ENERGITM Semiconductors Manufacturing
Our products range includes rectifier diodes, phase control thyristors in disc and stud design, avalanche diodes and thyristors, fast switching, high frequency thyristors, fast recovery, welding and rotor diodes, triacs, bridge rectifiers, power modules (thyristor, diode, thyristor-diode, IGBT), and air and water heatsinks to them.
Power diodes and thyristors are produced for currents from 10A to 15000A, voltage range from 100V to 9000V.
Power diode and thyristor modules are produced from 25A and up to 1250A, voltage range 400V - 4400V.
The range of power semiconductors also includes equivalent, replacement, analogue and alternative semiconductor devices of global manufacturers.
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