High Power Fast Recovery Diode E1250HC45E IXYS Westcode Replacement
IXYS Westcode Part Number | E1250HC45E |
Average forward current, IF(AV)M (TC) | 1355A (55ºC) |
Voltage, VRRM | 4500 V |
Package, Dimensions ØDxØdxH | Package W122 100x66x26 mm |
Datasheet | |
Replacement AS ENERGITM | ADDE1250HC45E |
Add to Cart | on request |
High Power Fast Recovery Diode ADDE1250HC45E AS ENERGITM is a replacement, analogue, alternative and equivalent semiconductor device for High Power Sonic Fast Recovery Diode (FRD) E1250HC45E IXYS UK Westcode, Littelfuse. Average forward current IFAV – 1355 ampere, repetitive peak reverse voltage VRRM – 4500V.
Ultra fast and ultra soft recovery diode available up to 6.5kV in current ratings from 270A to 4200A. These diodes incorporate a unique manufacturing process and lifetime control to offer a class leading trade-off between conduction and switching losses. The wide safe operating area makes them ideal as freewheeling diodes for snubberless IGBT and IGCT applications or any application which requires a fast, low loss diode. For example, traction, medium voltage drives, induction heating and pulsed power applications.
Features: class-leading performance and reliability; optimised for line frequency; low on-state losses; high reverse voltage and high current handling capabilities, high surge capability.
"Air-cooled heatsinks O series for disc devices", "Air heatsink SF series", "Water heatsink SS series" for thyristors and diodes cooling are also available to order.
Rectifier Diodes AS ENERGITM have the following features: industry standard housing; low static and dynamic losses, high values of VRRM/VRSM, extensive experience of using the devices in various industries, range of voltages from 100 to 9000 V and amperages from 10 to 15000 A, high resistance to thermal and electric cycling.
The technical specifications and parameters of E1250HC45E and replacement ADDE1250HC45E, datasheet PDF, outline drawing and dimensions are listed below.
Our company provides a quality guarantee for high power ultra fast and ultra soft recovery diodes of 2 years from the date of purchase. When supplying diodes, if necessary, we provide technical passport and certificate of conformity.
The final price for high power fast and soft recovery diodes depends on the voltage class, quantity, delivery terms, manufacturer, country of origin and form of payment.
General specifications of High Power Fast Recovery Diode IXYS WESTCODE and Replacements:
Diode specifications | E1250HC45E | |
Maximum allowable average forward current (Case temperature) | IF(AV)M (TC) | 1355 A (55ºC) |
Max. repetitive peak reverse blocking voltage | VRRM | 4500 V |
Surge peak forward current | IFSM | 20500 A |
Safety factor | I2t | 2.11x106 A2·s |
Reverse recovery current | Irm | 1000 A |
Reverse recovery time | trr | 1.2 µs |
Recovered charge | Qrr | 1850 µC |
Forward current | IFM | 1250 A |
Critical rate of rise of forward current | -diF/dt | 2000 A/µs |
Threshold voltage | VT0 | 2.072 V |
Slope resistance | rT | 1.166 mΩ |
Temperature of p-n junction | Tvj max | 140 ºC |
Thermal resistance, junction to heatsink | RthJK | 0.0105 K/W |
Clamping force | Fm | 32 - 40 kN |
Weight | W | 1.2 kg |
Package (Housing) | type | W122 |
Dimensions | ØDxØdxH | 100x66x26 mm |
Replacement AS ENERGITM | type | ADDE1250HC45E |
Datasheet |
Part Numbering Guide for High Power Fast Recovery Diodes:
A | DDE | 1250 | HC | 45 | E |
A | – | AS ENERGITM |
DDE | – | Product group: Diode Disc type, High Power Fast Recovery Diode. |
1250 | – | Average forward current IF(AV), Amp. |
HC | – | Housing (package) type. |
45 | – | Voltage class VRRM / 100. |
E | – | Fixed code, product series. |
Dimensions of High Power Fast Recovery Diode E1250HC45E and Replacement ADDE1250HC45E:
Polarity (anode, cathode) of power rectifier disc diodes:
High Power Semiconductors AS ENERGITM
Our company is engaged in the manufacturer and sale of wide range of power semiconductors (power thyristors, modules, rectifier diodes, avalanche, rotor and welding diodes, triacs etc.) currents up to 15000A and voltages to 9000V, and air and water heatsinks to them.
You can buy semiconductor devices in any volumes, and when ordering large lots, the price will be lower. We have earned the trust of customers and supply products all over the world.
For questions regarding the acquisition of Power Thyristors, Diodes, Modules send an email request to:
And we will provide you a commercial offer for delivery.
For a large number, we will provide an individual price!!!
We are open to manufacture products at our production facilities
according to your requests and technical task.
Photo Gallery
The photo gallery shows many different semiconductor devices, semiconductor chips and SCRs produced by AS ENERGITM, examples of test reports.
Heat sinks for power rectifier disc diodes:
Heat sinks (radiators) are used for single- and double-sided cooling of power semiconductor devices in disc design.
Heat sinks of coolers are made of aluminum radiator profiles and do not require additional protective coating when used in various climatic conditions.
Air and water heat sinks for rectifier diode cooling are also available to order.
See for more information about heatsinks: "Air-cooled heatsinks O series for disc devices", "Air heatsink SF series", "Water heatsink SS series".
Photo of Rectifier Diodes:
Why choose AS ENERGITM
- Own production facilities, including semiconductor silicon chips production
- European brand - 100% quality, favorable price, short production terms
- Over 20 years of experience in the semiconductor industry
- Clients from more than 50 countries trust us
- 20000 items in the product line for currents from 10A to 15000A, voltages from 100V to 9000V
- We produce analogues of other manufacturers' products
- Guaranteed certified quality, warranty period of operation - 2 years
Quality Warranty
Our products are certified and correspond to international standards.
Our company provides a quality guarantee for products of 2 years.
We provide certificates of conformity, reliability reports, data sheets and technical passports at the request of the customer.
Each product is tested for the main parameters, and Test reports of the parameters for each product are provided.
Geography of partnership
AS ENERGITM company manufactures and supplies power semiconductors to more than 50 countries around the world.
Logistics and Delivery
We deliver our products all over the world with the services of logistics companies: DHL, TNT, UPS, EMS, Fedex, Aramex.
Products can be delivered by any means of transport: air, sea, rail and road.
AS ENERGITM Semiconductors Manufacturing
Our products range includes rectifier diodes, phase control thyristors in disc and stud design, avalanche diodes and thyristors, fast switching, high frequency thyristors, fast recovery, welding and rotor diodes, triacs, bridge rectifiers, power modules (thyristor, diode, thyristor-diode, IGBT), and air and water heatsinks to them.
Power diodes and thyristors are produced for currents from 10A to 15000A, voltage range from 100V to 9000V.
Power diode and thyristor modules are produced from 25A and up to 1250A, voltage range 400V - 4400V.
The range of power semiconductors also includes equivalent, replacement, analogue and alternative semiconductor devices of global manufacturers.
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